on November 10th 79

Everything You Need to Know About the AO4407A MOSFET

The AO4407A MOSFET is a reliable and efficient 30V P-Channel device, designed for applications requiring stable switching and control. This article covers its features, specifications, common uses, and insights into its manufacturer, making it easy to understand its role in various electronic systems.

Catalog

Introduction to AO4407A

The AO4407A is a 30V P-Channel MOSFET, built for applications that require efficiency and dependability. Packaged in a standard SOIC-8 format, it utilizes advanced trench technology, allowing it to achieve lower on-state resistance (RDS ON) and reduced gate charge. This design helps ensure smoother operation with minimal power loss, making it an ideal choice for switching and pulse-width modulation (PWM) applications. The 25V gate rating further enhances its versatility, enabling it to handle varied loads while maintaining consistent performance. With its efficient layout and robust construction, the AO4407A adapts well to the demands of modern electronic systems, supporting efficient, low-energy operation in a range of setups.

AO4407A Pin Configuration

AO4407A CAD Model

AO4407A Symbol

AO4407A Footprint

AO4407A 3D Model

AO4407A Specifications

Technical specifications, features, characteristics, and components with comparable specifications of Alpha & Omega Semiconductor Inc. AO4407A.

Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	Silicon
Current - Continuous Drain (Id) @ 25℃	12A Ta
Drive Voltage (Max Rds On, Min Rds On)	6V 20V
Number of Elements	1
Power Dissipation (Max)	3.1W Ta
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Position	Dual
Terminal Form	Gull Wing
Pin Count	8
Configuration	Single with Built-in Diode
Operating Mode	Enhancement Mode
Power Dissipation	3.1W
FET Type	P-Channel
Transistor Application	Switching
Rds On (Max) @ Id, Vgs	11mΩ @ 12A, 20V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Drain to Source Voltage (Vdss)	30V
Vgs (Max)	±25V
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	25V
DS Breakdown Voltage-Min	30V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

AO4407A Key Features

Type of Transistor: MOSFET

The AO4407A is a P-Channel MOSFET, a type of transistor designed to control current by acting as a switch. Its structure enables efficient control over electrical flow, making it highly suited for power regulation in various applications.

Control Channel: P-Channel

With its P-Channel configuration, the AO4407A operates by allowing current to flow when a negative voltage is applied to the gate. This feature is helpful for switching applications, particularly in systems that benefit from simplified circuitry.

Maximum Power Dissipation

The AO4407A can handle up to 3.1 watts of power dissipation. This rating means it can safely operate in environments where power levels fluctuate, maintaining performance without overheating or energy waste.

Maximum Drain-Source Voltage

Capable of withstanding up to 30 volts between its drain and source terminals, this MOSFET is suitable for applications requiring higher voltage tolerances, providing flexibility in different circuit designs.

Maximum Gate-Source Voltage

The AO4407A can handle a maximum gate-source voltage of 25 volts. This attribute offers reliability when working in circuits where gate voltages vary, allowing for stable operation without compromising efficiency.

Gate-Threshold Voltage

With a maximum gate-threshold voltage of 3 volts, the AO4407A begins to conduct only when this threshold is reached. This characteristic ensures that it only activates under the appropriate conditions, preventing accidental switching.

Maximum Drain Current

The AO4407A can handle a maximum drain current of 12 amperes. This capacity makes it suitable for applications requiring moderate to high current, ensuring stable and reliable performance under load.

Maximum Junction Temperature

Designed to operate within a wide temperature range, the AO4407A can withstand junction temperatures up to 150°C. This resilience allows it to function effectively in varied environmental conditions without degrading its performance.

Rise Time

The AO4407A has a rise time of 9.4 nanoseconds, which refers to how quickly it switches on. This fast response time makes it an ideal choice for applications where timing and efficiency are prioritized, such as in PWM circuits.

Drain-Source Capacitance

With a drain-source capacitance of 370 picofarads, this MOSFET manages energy storage between these two terminals efficiently. This feature is helpful for maintaining smooth current flow and reducing noise in sensitive circuits.

On-State Resistance

The AO4407A has an on-state resistance of 0.013 ohms, which helps minimize power loss during operation. This low resistance enhances efficiency, making it suitable for energy-conscious applications where reducing power loss is a priority.

Package

Packaged in an SO-8 format, the AO4407A is compact and easy to integrate into various circuit boards. Its design allows for efficient use of space, providing flexibility for compact or space-restricted applications.

Equivalents of AO4407A

• AO4314

• AO4354

• AO4402

• AO4403

• AO4404B

• AO4405

• AO4406A

• AO4407

• IRF530

• AO4409

• AO4410

• AO4411

• AO4413

• AO4415

• AO4419

• AO4420

• AO4421

Applications and Usage of AO4407A

The AO4407A is well-suited for use as a load switch or in pulse-width modulation (PWM) applications. Below are some key details of the AO4407A P-Channel MOSFET:

• VDS rating of -30V

• ID of -12A (with VGS at -20V)

• RDS (ON) less than 11mΩ (with VGS at -20V)

• RDS (ON) less than 13mΩ (with VGS at -10V)

• RDS (ON) less than 17mΩ (with VGS at -6V)

• Fully tested for Unclamped Inductive Switching (UIS)

• Fully tested for gate resistance (Rg)

Parts with Similar Specifications to AO4407A

The parts on the right have specifications similar to the Alpha & Omega Semiconductor Inc. AO4407A.

Parameter	AO4407A	FDS6670A	SI4425DDY-T1-GE3	FDS6679AZ	IRF7821TRPBF
Manufacturer	Alpha & Omega Semiconductor	ON Semiconductor	Vishay Siliconix	ON Semiconductor	Infineon Technologies
Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)	8-SOIC (0.154, 3.90mm Width)	8-SOIC (0.154, 3.90mm Width)	8-SOIC (0.154, 3.90mm Width)	8-SOIC (0.154, 3.90mm Width)
Drain to Source Voltage (Vdss)	30V	30V	30V	-	-
Continuous Drain Current (Id)	12A	-13A	-13A	13.6A	13A
Current - Continuous Drain (Id) @ 25°C	12A (Ta)	19.7A (Tc)	13A (Ta)	13.6A (Ta)	13A (Ta)
Gate to Source Voltage (Vgs)	25V	20V	25V	20V	-
Power Dissipation	3.1W	5.7W	2.5W	2.5W	2.5W
Power Dissipation - Max	3.1W (Ta)	2.5W (Ta), 5.7W (Tc)	2.5W (Ta), 5.7W (Tc)	2.5W (Ta)	2.5W (Ta)

AO4407A Physical Dimensions

About the Manufacturer: Alpha and Omega Semiconductor, Inc.

Alpha and Omega Semiconductor, Inc. (AOS) is a global developer and supplier of power semiconductors, known for combining innovative device design, process technology, and packaging expertise. AOS offers a wide range of Power MOSFETs and Power ICs crafted to meet the growing need for power efficiency in high-demand applications. Their products are widely used in portable electronics, flat-panel displays, battery packs, media devices, and power supplies. With a focus on performance optimization and cost efficiency, AOS continues to support the evolving requirements of high-volume markets, providing components that enhance energy efficiency and reliability across various devices and technologies.

Datasheet PDF

AO4407A Datasheet:

AO4407A.pdf

FDS6670A Datasheet:

FDS6670A.pdf

SI4425DDY-T1-GE3 Datasheet:

SI4425DDY-T1-GE3.pdf

FDS6679AZ Datasheet:

FDS6679AZ.pdf