Manufacturer Part Number
FDS6670A
Manufacturer
onsemi
Introduction
The FDS6670A is a high-performance N-channel MOSFET from onsemi, designed for a wide range of power management and switching applications.
Product Features and Performance
Low on-resistance (Rds(on)) of 8 mΩ at 13 A and 10 V
High continuous drain current (Id) of 13 A at 25°C
Wide operating temperature range of -55°C to 150°C
Low gate charge (Qg) of 30 nC at 5 V
High input capacitance (Ciss) of 2220 pF at 15 V
Suitable for high-frequency switching applications
Product Advantages
Excellent efficiency and thermal performance
Robust design for reliable operation
Suitable for space-constrained applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Gate-to-Source Voltage (Vgs): ±20 V
Power Dissipation (Max): 2.5 W
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Suitable for a variety of power management and switching applications
Application Areas
Power supplies
Motor drives
Telecommunications equipment
Industrial automation
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Robust design for reliable operation
Suitable for high-frequency switching applications
Wide operating temperature range
RoHS3 compliance for safety-critical applications