on October 30th 146

STP55NF06 Power MOSFET Guide: Pinout, Specifications, and Alternatives

In this article, we dive into the capabilities and applications of the STP55NF06 MOSFET, a robust N-channel power MOSFET well-regarded for its efficiency and adaptability in high-demand circuits. Known for its low on-resistance and swift switching speed, this MOSFET is an asset in power-sensitive systems such as motor controllers and power supplies. With the ability to handle a 60V drain-source voltage and continuous currents up to 55A, the STP55NF06 is ideal for power-intensive applications, offering efficient thermal management and reliability across various operating conditions. From automotive systems to renewable energy applications, the STP55NF06 MOSFET’s versatile design enables improved performance, energy efficiency, and enhanced system longevity.

Catalog

Understanding the STP55NF06

The STP55NF06 is a highly capable N-channel MOSFET, notable for handling considerable current flows and enabling swift switching actions. It demonstrates impressive efficiency due to its low on-resistance. The device begins conduction with a gate voltage of 10V and reaches maximum efficiency at 20V, positioning it as a strong candidate for operating high-power loads. Its gate threshold of 4V ensures it works well with microcontrollers, yet it achieves its best at 10V, supporting continuous current up to 27A. To integrate smoothly with microcontrollers, the involvement of a driver circuit or a logic-level MOSFET, such as the 2N7002, is advisable. The device's commendable frequency response makes it fitting for DC-DC converters.

In applications involving MOSFETs like the STP55NF06, grounding the gate correctly is required to avoid unintended triggering. Since MOSFETs activate and deactivate based on voltage, mastering voltage management becomes insistent. You can often incorporate additional protective measures like zener diodes to stabilize gate voltage and shield against voltage surges.

Successfully integrating with microcontrollers requires the strategic deployment of driver circuits. These circuits address the differences between the microcontroller’s output voltage and the MOSFET's gate demands. A common approach employs a level-shifting driver to bridge this gap, ensuring seamless interaction between components.

Pin Configuration

CAD Model

Symbol

Footprint

3D Model

Features

Feature	Specification
MOSFET Type	N-Channel
Continuous Drain Current (ID)	35A
Pulsed Drain Current (ID-peak)	50A
Drain to Source Breakdown Voltage (VDS)	60V
Drain Source Resistance (RDS)	0.018 Ω
Gate Threshold Voltage (VGS-th)	20V (max)
Rise Time	50 ns
Fall Time	15 ns
Input Capacitance (Ciss)	1300 pF
Output Capacitance (Coss)	300 pF
Package Type	TO-220

Applications

Electric Power Steering (EPS)

Electric Power Steering systems in modern vehicles enhance both precision and comfort in driving. The STP55NF06 MOSFET plays a remarkable role in optimizing power usage and response time, thereby contributing to these enhancements. Drivers often report a tangible reduction in fuel consumption, as EPS systems draw power selectively, significantly impacting vehicle efficiency.

Anti-lock Braking System (ABS)

Within ABS, the STP55NF06 provides swift and efficient switching, used for optimal braking control. Its high-temperature resilience and rapid switching capabilities are especially beneficial in emergencies. Tests consistently demonstrate improved safety by preventing wheel lock-up, confirming its effectiveness.

Wiper Control Systems

In wiper control systems, the STP55NF06 is basic for precise and reliable operations across various weather conditions. Its capacity to handle variable loads with minimal power loss ensures efficient windshield clearing. Extensive testing in diverse climates proves its efficacy in enhancing visibility and driver safety.

Climate Control Systems

The STP55NF06 drives motors and compressors in climate control systems with exceptional efficiency, allowing for precise temperature management within vehicles. This MOSFET's energy-saving capabilities reduce overall vehicle power consumption. Practical applications showcase its role in maintaining comfort while prolonging battery life.

Power Door Mechanisms

Power door systems leverage the consistent performance of the STP55NF06 for smooth and reliable operations. The MOSFET's durability across repeated cycles ensures longevity and minimizes maintenance. Field feedback highlights fewer failures, leading to greater consumer satisfaction and confidence in automated doors.

Test Circuit

STP55NF06 - Examining Switching Times with Resistive Load

STP55NF06 - Investigating Gate Charge Dynamics

Leveraging the STP55NF06 MOSFET

The STP55NF06 MOSFET functions efficiently with modest voltage demands, initiating operation around 4V. This feature aligns well with applications requiring lower voltages. When linked to VCC, the gate prompts conduction; grounding it halts the current. If the gate voltage falls below 4V, conduction stops. A pull-down resistor, typically near 10K, ensures the gate remains grounded when inactive, bolstering reliability.

In practical applications, stable gate voltage management emerges as influential for performance. In scenarios demanding precision, integrating feedback mechanisms can refine operations, allowing systems to sustain desired functionality amidst fluctuating conditions.

Circuit Implementation

To keep the MOSFET engaged, the gate connects to the supply voltage. If the voltage slips below 4V, the device enters the ohmic region, halting conduction. A pull-down resistor, such as a 10K resistor, stabilizes the circuit by keeping the gate grounded when not active, reducing risks of unintended activation from sudden voltage changes.

Technical Specifications

Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	50A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	110W Tc
Turn Off Delay Time	36 ns
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	18mOhm
Terminal Finish	Matte Tin (Sn)
Voltage - Rated DC	60V
Current Rating	50A
Base Part Number	STP55N
Pin Count	3
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	30W
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 27.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Rise Time	50ns
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Continuous Drain Current (ID)	50A
Threshold Voltage	3V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	55A
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	200A
Dual Supply Voltage	60V
Nominal Vgs	3 V
Height	9.15mm
Length	10.4mm
Width	4.6mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Comparable Components

Part Number	Manufacturer	Mount	Package / Case	Continuous Drain Current (ID)	Current - Continuous Drain (Id) @ 25°C	Threshold Voltage	Gate to Source Voltage (Vgs)	Power Dissipation	Power Dissipation-Max
STP55NF06	STMicroelectronics	Through Hole	TO-220-3	50 A	50A (Tc)	3 V	20 V	30 W	110W (Tc)
STP65NF06	STMicroelectronics	Through Hole	TO-220-3	60 A	60A (Tc)	1 V	15 V	110 W	110W (Tc)
STP60NF06L	STMicroelectronics	Through Hole	TO-220-3	55 A	55A (Tc)	2 V	25 V	114 W	114W (Tc)
STP60NF06	STMicroelectronics	Through Hole	TO-220-3	60 A	60A (Tc)	4 V	20 V	110 W	110W (Tc)
FDP55N06	ON Semiconductor	-	TO-220-3	-	60A (Tc)	-	-	-	110W (Tc)

Package

Manufacturer Overview

STMicroelectronics leads in semiconductor solutions, showcasing deep knowledge in silicon and systems. This expertise pushes them forward in advancing System-on-Chip (SoC) technology, aligning with modern tech advancements. Their silicon proficiency crafts high-performance, energy-efficient solutions required for various applications. From consumer electronics to industrial devices, these solutions drive the rapid evolution of connected technologies, meeting the thirst for smarter, sustainable innovations.

STMicroelectronics plays a notable role in SoC technology by integrating functions on a single chip, optimizing performance, and cutting costs. This meets the demand for efficient, compact, and versatile electronics. Automotive and IoT sectors mainly showcase the company's impact on transforming industries. The semiconductor sector thrives on relentless innovation and adaptation. Companies like STMicroelectronics foster seamless device interoperability through collaboration and integration, adapting to advances while ensuring reliability and performance. Their adaptive strategies and collaborative ethos offer a subtle model for industry best practices.

Datasheet PDF

STP55NF06 Datasheets:

STx55NF06(-1,FP).pdf

STP65NF06 Datasheets:

STD65NF06, STP65NF06.pdf

STP60NF06L Datasheets:

STx60NF06L(FP).pdf

STP60NF06 Datasheets:

STP60NF06.pdf

FDP55N06 Datasheets:

TO220B03 Pkg Drawing.pdf

FDP55N06, FDPF55N06.pdf