Manufacturer Part Number
FDP55N06
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
High drain-source voltage rating of 60 V
Low on-resistance of 22 mΩ at 27.5 A, 10 V
High continuous drain current of 55 A at 25°C
Wide operating temperature range of -55°C to 150°C
Robust Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) technology
Product Advantages
Excellent power handling capabilities
Efficient power conversion and control
Reliable performance in harsh environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 60 V
Gate-Source Voltage (Vgs): ±25 V
On-Resistance (Rds(on)): 22 mΩ @ 27.5 A, 10 V
Continuous Drain Current (Id): 55 A @ 25°C
Input Capacitance (Ciss): 1510 pF @ 25 V
Power Dissipation (Pd): 114 W @ 25°C
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Ruggedized TO-220-3 package for reliable operation
Compatibility
Compatible with various electronic circuits and power management applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial automation and control systems
Automotive electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High power handling and efficiency for demanding applications
Reliable performance in harsh environments
Suitable for a wide range of power electronics and control systems
Robust and RoHS-compliant design for long-term use
FDP4D5N10ConsemiMOSFET N-CH 100V 128A TO220-3