Manufacturer Part Number
FDP52N20
Manufacturer
onsemi
Introduction
The FDP52N20 is a high-performance N-channel MOSFET transistor from onsemi, part of the UniFET series.
Product Features and Performance
N-channel MOSFET design
High drain-to-source voltage rating of 200V
Low on-resistance of 49mΩ at 26A, 10V
Continuous drain current of 52A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 2900pF at 25V
Maximum power dissipation of 357W at 25°C case temperature
Gate charge of 63nC at 10V
Product Advantages
Excellent power handling and efficiency
Reliable performance across wide temperature range
Compact TO-220-3 package for easy integration
Key Technical Parameters
Drain-to-source voltage (Vdss): 200V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 49mΩ @ 26A, 10V
Continuous drain current (Id): 52A @ 25°C
Input capacitance (Ciss): 2900pF @ 25V
Power dissipation (Pd): 357W @ 25°C
Quality and Safety Features
RoHS3 compliant
Reliable through-hole TO-220-3 package
Compatibility
Suitable for a variety of power electronics and motor control applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial control systems
Product Lifecycle
Current production, no discontinuation planned
Replacements and upgrades available within the UniFET series
Key Reasons to Choose
Excellent power handling and efficiency
Reliable performance across wide temperature range
Compact and easy to integrate TO-220-3 package
RoHS3 compliance for environmental safety
FDP4D5N10ConsemiMOSFET N-CH 100V 128A TO220-3