Manufacturer Part Number
FDP55N06
Manufacturer
Fairchild (onsemi)
Introduction
High-performance MOSFET transistor suitable for a wide range of power conversion and control applications.
Product Features and Performance
N-channel MOSFET with a maximum drain-source voltage of 60V
Low on-resistance (RDS(ON)) of 22mΩ at 27.5A, 10V
Continuous drain current (ID) of 55A at 25°C
Maximum power dissipation of 114W at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge (37nC at 10V)
Robust construction in a standard TO-220-3 package
Product Advantages
Excellent performance-to-cost ratio for power conversion applications
High current handling capability with low on-resistance
Suitable for a wide range of operating temperatures
Reliable and rugged construction in a standard package
Key Technical Parameters
Drain-Source Voltage (VDS): 60V
Gate-Source Voltage (VGS): ±25V
On-Resistance (RDS(ON)): 22mΩ @ 27.5A, 10V
Continuous Drain Current (ID): 55A @ 25°C
Input Capacitance (Ciss): 1510pF @ 25V
Power Dissipation (PD): 114W @ 25°C
Gate Charge (Qg): 37nC @ 10V
Quality and Safety Features
Robust TO-220-3 package for reliability and safety
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power conversion and control applications, including:
- Motor drives
- Switching power supplies
- Inverters
- Industrial controls
Application Areas
Power conversion and control
Motor drives
Switching power supplies
Inverters
Industrial controls
Product Lifecycle
This product is currently in active production and available for purchase.
Replacements and upgrades may be available in the future, depending on market demand and technology advancements.
Several Key Reasons to Choose This Product
Excellent performance-to-cost ratio for power conversion applications
High current handling capability with low on-resistance
Suitable for a wide range of operating temperatures
Reliable and rugged construction in a standard package
Proven quality and safety features
