Manufacturer Part Number
FDP4D5N10C
Manufacturer
onsemi
Introduction
This product is a high-performance, N-channel MOSFET transistor from onsemi's PowerTrench series. It is designed for high-power and high-efficiency applications.
Product Features and Performance
100V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
5mΩ Maximum ON-State Resistance (RDS(on)) at 100A, 10V
128A Continuous Drain Current (ID) at 25°C
5065pF Maximum Input Capacitance (Ciss) at 50V
4W Power Dissipation at 25°C, 150W at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
Product Advantages
High power density and efficiency
Excellent thermal management
Reliable and rugged performance
Suitable for a wide range of high-power applications
Key Technical Parameters
MOSFET Technology: N-Channel
Vgs(th) (Max): 4V at 310A
Drive Voltage (Max RDS(on), Min RDS(on)): 10V
Gate Charge (Qg) (Max): 68nC at 10V
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for reliable operation and thermal management
Compatibility
Designed for use in a variety of high-power applications, including motor drives, power supplies, and industrial electronics.
Application Areas
Industrial power electronics
Motor drives
Power supplies
Inverters and converters
General high-power switching applications
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options may be available from onsemi or other manufacturers.
Key Reasons to Choose This Product
Exceptional power handling and efficiency
Robust and reliable performance
Wide operating temperature range
Compatibility with a variety of high-power applications
Backed by onsemi's quality and support
