Manufacturer Part Number
FDP39N20
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
200V drain-to-source voltage
39A continuous drain current
66mΩ on-resistance
Wide operating temperature range of -55°C to 150°C
Low gate charge and input capacitance
Suitable for high-frequency and high-power switching applications
Product Advantages
Excellent switching performance
High power density
Reliable operation in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 66mΩ @ 19.5A, 10V
Drain Current (Id): 39A (Tc)
Input Capacitance (Ciss): 2130pF @ 25V
Power Dissipation (Tc): 251W
Quality and Safety Features
Robust TO-220-3 package
Complies with relevant safety and quality standards
Compatibility
Compatible with a wide range of high-power electronic circuits and systems
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation equipment
Renewable energy systems
Product Lifecycle
Currently in active production
Replacement parts and upgrades available
Key Reasons to Choose This Product
Excellent performance and power handling capabilities
Reliable operation in demanding environments
Cost-effective solution for high-power switching applications
Backed by Fairchild (onsemi)'s reputation for quality and innovation