Manufacturer Part Number
FQD7N20LTM
Manufacturer
onsemi
Introduction
High voltage MOSFET transistor for power electronics applications
Product Features and Performance
High voltage capability up to 200V drain-source voltage
Low on-resistance of 750mΩ
Continuous drain current up to 5.5A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Fast switching performance with low gate charge of 9nC
Product Advantages
Excellent power handling and efficiency
Reliable and robust design
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 750mΩ @ 2.75A, 10V
Continuous Drain Current (Id): 5.5A @ 25°C
Input Capacitance (Ciss): 500pF @ 25V
Power Dissipation: 2.5W @ 25°C ambient, 45W @ 25°C case
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
TO-252-3 (D-Pak) surface mount package
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current production
Replacement and upgrade options available
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for improved efficiency
Robust and reliable performance
Suitable for a wide range of high-power applications
