The SS8550 is a PNP transistor often chosen for its adaptability across a range of electronic applications. Known for managing low voltage with a capacity to support high current, it has a collector current maximum of 1.5 A. Such qualities promote its utilization in circuits requiring efficient low-voltage amplification or adept switching operations. The capability of this transistor to handle substantial current at low voltage is highly valuable in power management circuits, audio amplifiers, and signal processing units. Its reliable current management makes it suitable for both analog and digital circuits.
• SS9012
• SS9015
Pin Number |
Pin Name |
Description |
1 |
Emitter |
The emitter pin releases charge carriers. In circuit
applications, its correct orientation is good for improving current flow and
ensuring the transistor's stability. |
2 |
Base |
Acts as the control gate by regulating the flow of
charges from the emitter to the collector. Modulating the base current is key
for adjusting amplification levels for achieving desired performance
in circuit configurations. |
3 |
Collector |
The endpoint for collecting charge carriers. Proper
connection and alignment are needed to maximize efficiency and minimize
energy loss, as misalignments can impact the performance of the
circuit. |
The SS8550 transistor is renowned for its substantial operational proficiency, most notably as a 2W output amplifier, perfectly suited for portable radios using Class B push-pull configurations. It pairs effortlessly with the SS8050 counterpart, forming a powerful electronic duo that amplifies the performance of compact devices. A thorough examination of its properties highlights a collector-base voltage of 40V and a power dissipation capacity of 1W under thermal conditions.
Its design accommodates a broad temperature range from -55°C to +150°C, allowing it to function reliably across various environments. The SS8550 adheres to RoHS standards, reflecting a dedication to environmentally friendly manufacturing, in line with global sustainability movements. There is a notable interplay between adherence to such standards and preferences, indicating that compliance not only safeguards the environment but also boosts confidence.
Technical specifications, attributes, and parameters of ON Semiconductor's SS8550, along with parts similar to the SS8550DBU.
Type |
Parameter |
Lifecycle Status |
ACTIVE (Last Updated: 2 days ago) |
Mount |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Weight |
179mg |
Collector-Emitter Breakdown Voltage |
25V |
hFE Min |
85 |
Packaging |
Bulk |
JESD-609 Code |
e3 |
Part Status |
Active |
Number of Terminations |
3 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
1W |
Current Rating |
-1.5A |
Base Part Number |
SS8550 |
Factory Lead Time |
7 Weeks |
Mounting Type |
Through Hole |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
150°C TJ |
Published |
2017 |
Pbfree Code |
yes |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Voltage - Rated DC |
-25V |
Terminal Position |
BOTTOM |
Frequency |
200MHz |
Element Configuration |
Single |
Power Dissipation |
1W |
Gain Bandwidth Product |
200MHz |
Transistor Application |
AMPLIFIER |
Polarity/Channel Type |
PNP |
Collector Emitter Voltage (VCEO) |
25V |
DC Current Gain (hFE) (Min) @ Ic, Vce |
160 @ 100mA 1V |
Vce Saturation (Max) @ Ib, Ic |
500mV @ 80mA, 800mA |
Collector Base Voltage (VCBO) |
-40V |
Transition Frequency |
200MHz |
Emitter Base Voltage (VEBO) |
-6V |
Current - Collector Cutoff (Max) |
100nA ICBO |
Max Collector Current |
1.5A |
Radiation Hardening |
No |
Lead Free |
Lead Free |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Part Number |
Description |
Manufacturer |
SS8550DBU |
1500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
Rochester Electronics LLC |
SS8550DBU |
Through Hole, Collector Emitter Breakdown Voltage 25 V,
Max Collector Current 1.5 A, Transition Frequency 200 MHz, Collector Emitter
Saturation Voltage -280 mV, hFE Min 85, Max Power Dissipation 1 W |
ON Semiconductor |
KSB564AOBU |
Through Hole, Collector Emitter Breakdown Voltage 25 V,
Max Collector Current 1.5 A, Transition Frequency 200 MHz, Collector Emitter
Saturation Voltage -280 mV, hFE Min 85, Max Power Dissipation 1 W |
ON Semiconductor |
SS8550CBU |
Through Hole, Collector Emitter Breakdown Voltage 25 V,
Max Collector Current 1.5 A, Transition Frequency 200 MHz, Collector Emitter
Saturation Voltage -280 mV, hFE Min 85, Max Power Dissipation 1 W |
ON Semiconductor |
SS8550BBU |
Through Hole, Collector Emitter Breakdown Voltage 25 V,
Max Collector Current 1 A, Collector Emitter Saturation Voltage -500 mV, hFE
Min 70, Max Power Dissipation 800 W |
ON Semiconductor |
The SS8550 transistor finds extensive use in both switching and RF (Radio Frequency) applications, showcasing its extraordinary adaptability. This component is valued for its substantial current gain and impressive frequency capabilities, characteristics that enhance its effectiveness in signal amplification and electrical current management across a wide range of electronic systems. Its integration into various devices highlights the importance of choosing components with precise specifications for achieving excellent performance. Particularly in communication devices, its proficiency in handling high frequencies plays a role in sustaining signal integrity and clarity, integral aspects in today's swiftly evolving technological world.
ON Semiconductor stands out by crafting advanced silicon solutions that enhance the operational efficiency of electronic devices across various applications. Focusing on sectors such as automotive, communications, and LED lighting, they blend sophisticated technologies with sustainable practices. As society greatly craves energy-efficient innovations, ON Semiconductor's contributions increasingly address these desires. ON Semiconductor prioritizes the creation of eco-friendly products, drawing on their expansive industry knowledge. Their resolve extends to minimizing environmental impact through cutting-edge manufacturing techniques, reflecting a synergy with worldwide sustainability objectives. This effort shapes a more sustainable pathway in electronics production.
Copper Lead Frame 12/Oct/2007.pdf
Copper Lead Frame 12/Oct/2007.pdf
Please send an inquiry, we will respond immediately.
A triode, such as the SS8550, plays a role in signal amplification, capturing the essence of converting faint whispers of electrical signals into more discernible ones. In electronic circuits, it elevates weak signals to levels that can be effectively utilized. Functioning with a subtle touch at its base, the triode facilitates a more substantial current flow between the collector and emitter, enabling precise signal modulation. An insightful choice of triode, tailored to the desired circuit, depends on a keen understanding of parameters like gain, frequency response, and thermal stability. When designing circuits, harnessing these characteristics can unlock the potential across various applications, ranging from the resonant melodies of audio equipment to the expansive reach of communication devices.
The SS8550 can handle a peak collector current of 1.5 A, marking its threshold before excessive heat or electrical stress threaten its well-being. Vigilant thermal management is needed, as exceeding this current may lead to thermal runaway, a perilous surge in temperature with destructive potential for the transistor. Implementing measures such as heat sinks or selecting components with a naturally higher current tolerance can serve as safeguards against such risks. Maintaining the transistor within safe operational limits is an art that enhances the longevity and reliability of the device, reflecting a deep respect for its delicate balance.
on November 8th
on November 8th
on January 1th 3095
on January 1th 2661
on November 14th 2188
on January 1th 2176
on January 1th 1799
on January 1th 1773
on January 1th 1726
on January 1th 1668
on January 1th 1666
on November 14th 1617