Manufacturer Part Number
SS8550CBU
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), PNP type
Product Features and Performance
Operating Temperature: 150°C (TJ)
Power Rating: 1 W
Collector-Emitter Breakdown Voltage (Max): 25 V
Collector Current (Max): 1.5 A
Collector Cutoff Current (Max): 100 nA
Collector-Emitter Saturation Voltage (Max): 500 mV @ 80 mA, 800 mA
DC Current Gain (hFE) (Min): 120 @ 100 mA, 1 V
Transition Frequency: 200 MHz
Product Advantages
Robust performance in high temperature environments
Suitable for high current switching and amplification applications
Compact TO-92-3 package
Key Technical Parameters
Transistor Type: PNP
Package: TO-92-3, TO-226-3
Mounting Type: Through Hole
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic circuits and systems requiring high-performance PNP transistors
Application Areas
Power amplifiers
Switching circuits
Voltage regulators
Audio electronics
Industrial controls
Product Lifecycle
Currently in production
Replacement parts and upgrades available
Key Reasons to Choose This Product
Excellent thermal performance
High current handling capability
Robust and reliable design
Suitable for a wide range of electronic applications
Readily available and well-supported by the manufacturer
SS8550LT1MSV
SS8550-DFairchild (onsemi)