SS8550DBU - onsemi

Manufacturer Part Number

SS8550DBU

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

Power Rating: 1 W

Collector-Emitter Breakdown Voltage: 25 V

Collector Current (Max): 1.5 A

Collector Cutoff Current (Max): 100 nA

Collector-Emitter Saturation Voltage: 500 mV @ 80 mA, 800 mA

DC Current Gain (hFE): 160 min @ 100 mA, 1 V

Transition Frequency: 200 MHz

Product Advantages

Robust and reliable performance

High current and power handling capability

Fast switching speed

Key Technical Parameters

RoHS Compliant

Package: TO-92-3

Operating Temperature: 150°C (TJ)

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with TO-226-3 and TO-92-3 (TO-226AA) packages

Application Areas

General-purpose amplification and switching applications

Power control circuits

Switching mode power supplies

Product Lifecycle

Current production status

Replacement or upgrade options available

Key Reasons to Choose This Product

Robust and reliable performance

High current and power handling capability

Fast switching speed

RoHS compliance

Compatibility with common packages