Manufacturer Part Number
SS8550DTA
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
TO-92-3 Package
150°C Maximum Junction Temperature
1W Maximum Power Dissipation
25V Maximum Collector-Emitter Breakdown Voltage
5A Maximum Collector Current
100nA Maximum Collector Cutoff Current
500mV Maximum Collector-Emitter Saturation Voltage @ 80mA Collector Current, 800mA Collector Current
160 Minimum DC Current Gain @ 100mA Collector Current, 1V Collector-Emitter Voltage
200MHz Transition Frequency
Product Advantages
Robust and reliable performance
Suitable for a wide range of applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 25V
Current Collector (Ic) (Max): 1.5A
Current Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency Transition: 200MHz
Quality and Safety Features
RoHS3 Compliant
Compatibility
TO-226-3, TO-92-3 (TO-226AA) Formed Leads Package
Application Areas
Suitable for a wide range of electronic applications
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Several Key Reasons to Choose This Product
Robust and reliable performance
Suitable for a wide range of applications
Comply with RoHS3 requirements
Available in industry-standard package