Manufacturer Part Number
SS8550DBU
Manufacturer
Fairchild (onsemi)
Introduction
Bipolar Junction Transistor (BJT)
Single transistor
Small size and through-hole mounting
Product Features and Performance
High frequency operation up to 200MHz
High DC current gain (hFE) of at least 160
Low collector-emitter saturation voltage (Vce(sat)) of 500mV @ 80mA, 800mA
Low collector cutoff current (ICBO) of 100nA
Power rating of 1W
Operating temperature up to 150°C
Product Advantages
Suitable for high-frequency analog and switching applications
Compact and easy to integrate into designs
Reliable performance across wide temperature range
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 25V
Collector Current (IC): 1.5A
Transistor Type: PNP
Quality and Safety Features
Manufactured by reputable semiconductor company Fairchild (onsemi)
Compliance with quality and safety standards
Compatibility
TO-92-3 and TO-226-3 (TO-226AA) package options
Suitable for through-hole mounting
Application Areas
Amplifiers, switches, and other analog/digital circuits
Power supplies, regulators, and control circuits
Audio and radio frequency (RF) applications
Product Lifecycle
Currently in active production
Replacements and upgrades may be available from Fairchild (onsemi) or other semiconductor vendors
Key Reasons to Choose
High-performance transistor with excellent frequency and gain characteristics
Compact and easy to integrate package options
Reliable operation across wide temperature range
Manufactured by reputable semiconductor company Fairchild (onsemi)
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