SS8550CBU - Fairchild Semiconductor

Manufacturer Part Number

SS8550CBU

Manufacturer

Fairchild (onsemi)

Introduction

Discrete Semiconductor Product

Transistor - Bipolar (BJT) - Single

Product Features and Performance

TO-92-3 package

Operating Temperature: 150°C (TJ)

Power Rating: 1 W

Collector-Emitter Breakdown Voltage (Max): 25 V

Collector Current (Max): 1.5 A

Collector Cutoff Current (Max): 100nA (ICBO)

Collector-Emitter Saturation Voltage (Max): 500mV @ 80mA, 800mA

Transistor Type: PNP

DC Current Gain (hFE) (Min): 120 @ 100mA, 1V

Transition Frequency: 200 MHz

Product Advantages

Compact TO-92-3 package

High power rating of 1 W

High breakdown voltage of 25 V

High collector current up to 1.5 A

Low collector cutoff current of 100nA

Wide operating temperature range up to 150°C

Key Technical Parameters

Package: TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package: TO-92-3

Packaging: Bulk

Quality and Safety Features

Robust TO-92-3 package

Designed for high temperature operation up to 150°C

Compatibility

Compatible with various electronic circuits and applications requiring a discrete PNP transistor

Application Areas

Suitable for use in amplifiers, switches, power supplies, and other electronic circuits

Product Lifecycle

Mature product, not nearing discontinuation

Replacement and upgrade options available

Key Reasons to Choose This Product

Reliable and well-established Fairchild (onsemi) brand

Excellent performance characteristics, including high power rating, voltage, and current

Wide operating temperature range up to 150°C

Compact and robust TO-92-3 package

Suitable for a variety of electronic circuit applications