on October 16th 150

Mastering the IRF640N MOSFET Transistor : Datasheet, Pinout, and Equivalent Parts

The IRF640N MOSFET represents a remarkable advancement in power electronics, specifically within International Rectifier's fifth-generation HEXFET series. With its low on-resistance and high efficiency, the IRF640N is designed to meet the demands of modern applications requiring reliable power management and thermal performance. In this article, we will dive into its technical specifications, key features, and practical applications, demonstrating why it is a preferred choice for you in fields ranging from industrial control systems to consumer electronics.

Catalog

IRF640N Overview

The IRF640N MOSFET series, grounded in well-established silicon technologies, offers a versatile array of devices optimized for various applications. It's specifically tailored for DC motors, inverters, switch Mode Power Supplies (SMPS), lighting systems, load switches, and battery-powered equipment. These devices come in both surface mount and through-hole packages, adhering to industry-standard configurations to facilitate the design process.

The IRF640N series proves its worth in DC motors, where its high efficiency translates to enhanced performance and reduced energy consumption. When applied to inverters, these MOSFETs promote reliable power conversion, vital for renewable energy systems and uninterruptible power supplies (UPS). For SMPS, IRF640N devices improve power regulation and thermal management, contributing to the greater longevity and stability of electronic circuits.

These MOSFETs deliver reliable switching characteristics under diverse load conditions. For instance, in lighting applications, they ensure consistent performance and energy savings, especially notable in large-scale installations. In battery-powered devices, efficient power management provided by IRF640N MOSFETs extends battery life, a major aspect of portable electronics.

Understanding MOSFETs

Metal-oxide-semiconductor field-effect Transistors, commonly known as MOSFETs, are woven into the fabric of modern electronic circuits. They elegantly manage voltage switching or amplification, making them requisite in contemporary electronics. These semiconductor devices operate through three terminals: the source, the gate, and the drain. Each terminal significantly influences voltage and current regulation. What makes MOSFETs truly fascinating is the diversity in their operating principles, bringing unique benefits to a wide range of applications.

Structure and Function of MOSFETs

A MOSFET's complexity lies in its internal structure, which includes the source, gate, and drain combined with an oxide layer that insulates the gate. This architecture confers the ability to precisely regulate electron flow between the source and the drain. Applying voltage to the gate terminal generates an electric field. This field modulates the conductivity of the channel between the source and drain. This process is the essence of the MOSFET's dual role as a switch or amplifier, guiding the flow of electricity with unparalleled precision.

Types of MOSFETs

MOSFETs diversify into two main types: depletion mode and enhancement mode, each exhibiting unique traits and purposes.

• Enhancement-mode MOSFETs: These are prevalent in digital circuits. They remain non-conductive until a sufficient voltage activates the gate, bringing a deliberate control that suits intricate digital applications.

• Depletion-mode MOSFETs: By default, these conduct electricity and rely on gate voltage to inhibit current flow. This characteristic enables intuitive and automatic control in various contexts.

Main Specifications

Here is the technical specifications, key attributes, and performance parameters of the Infineon Technologies IRF640NPBF MOSFET.

Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	Silicon
Current - Continuous Drain (Id)	18A Tc @ 25℃
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	150W Tc
Turn Off Delay Time	23 ns
Operating Temperature	-55°C ~ 175°C TJ
Packaging	Tube
Series	HEXFET®
Published	1999
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	150mOhm
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC	200V
Peak Reflow Temperature (Cel)	250°C
Current Rating	18A
Time@Peak Reflow Temperature-Max (s)	30 seconds
Number of Channels	1
Element Configuration	Single
Operating Mode	Enhancement Mode
Power Dissipation	150W
Case Connection	Drain
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	Switching
Rds On (Max) @ Id, Vgs	150m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1160pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	67nC @ 10V
Rise Time	19 ns
Vgs (Max)	±20V
Fall Time (Typ)	5.5 ns
Continuous Drain Current (ID)	18A
Threshold Voltage	2V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	72A
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	247 mJ
Recovery Time	241 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4V
Height	19.8mm
Length	10.668mm
Width	4.826mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

IRF640N CAD Models

Symbol

Footprint

3D Models

Pin Configuration of IRF640N

Features of IRF640N

Feature	Description
Advanced Process Technology	Utilizes enhanced semiconductor processes for improved performance.
Dynamic dv/dt Rating	Provides robust performance against high-speed voltage transients.
175°C Operating Temperature	Supports high-temperature operation up to 175°C for greater reliability.
Fast Switching	Enables high-speed switching applications with low delay times.
Fully Avalanche Rated	Can safely handle avalanche energy, ensuring durability.
Ease of Paralleling	Simplified paralleling capability for higher current applications.
Simple Drive Requirements	Requires minimal gate drive voltage, making it easier to use in circuits.

Functional Block Diagram of IRF640N

Application Circuits

Gate Charge Test Circuit

Switching Time Test Circuit

Unclamped Energy Test Circuit

Benefits of the IRF640N

Enhanced Durability and Robustness

One appeal of the IRF640N rests in its remarkable durability and robustness, enabling it to perform reliably even in challenging operational settings. For instance, in industrial scenarios with frequent heat and electrical stresses, the IRF640N maintains its functionality without faltering. This resilience helps in preserving system stability, thereby reducing potential downtime and maintaining peak performance over time.

Broad Accessibility through Distribution Networks

Accessible through numerous distribution partners, obtaining the IRF640N is straightforward for you. This extensive availability simplifies procurement, shortens lead times, and facilitates the smooth progression of dangerous projects. Quick and reliable sourcing through vast supplier networks ensures projects stay on schedule by allowing for swift replacements and easier inventory management.

Compliance with Industry Standards

The IRF640N's adherence to industry-standard qualifications guarantees its safety, quality, and performance. Such compliance streamlines certification processes for devices utilizing the IRF640N, making it mostly useful in heavily regulated sectors like the automotive and aerospace industries. By meeting stringent standards, the IRF640N simplifies the pathway to gaining required approvals and certifications.

Superb Performance in Low-Frequency Applications

Excelling in low-frequency applications, this MOSFET is favored by many. Its design and material properties make it an optimal choice for power supplies, motor drivers, and other low-frequency electronics. This efficiency in energy utilization not only enhances system longevity but also contributes to overall device performance improvements.

Ease of Integration and Replacement

Boasting a standard pin-out design, the IRF640N is seamlessly incorporated into existing circuits, making it a convenient option for replacements. This compatibility significantly reduces the time required during the design and maintenance phases. The need for complex circuit redesigns is minimized, streamlining production processes and facilitating quicker troubleshooting.

High Current Carrying Capacity

Known for its ability to handle high currents, the IRF640N is well-suited to applications requiring substantial power delivery. This characteristic is highly valued in contexts where reliable high-current performance is key, such as automotive systems and power tools. You can leverage this attribute to optimize circuit performance and ensure that end devices function safely and efficiently.

IRF640N Equivalents

•IRFB23N20D

•IRFB260N

•IRFB31N20D

•IRFB38N20D

•IRFB4127

•IRFB4227

•IRFB4229

•IRFB4233

•IRFB42N20D

•IRFB4332

Manufacturer Background

International Rectifier began its journey as a prestigious American power technology company, gaining recognition for its specialization in analog and mixed-signal integrated circuits (ICs) and advanced power system solutions. The acquisition by Infineon Technologies on January 13, 2015, expanded its influence across various sectors.

The core of the company's expertise revolves around the creation and production of innovative analog and mixed-signal ICs. These developments address complex needs such as efficient power management and signal processing. Proficiency in these areas ensures optimized performance and long-term reliability, active for cutting-edge applications.

In the sphere of automotive electronics, International Rectifier's technology supports the rapid advancements in electric and hybrid vehicles. These enhancements lead to improved efficiency and lower environmental impact. This technology is evident in the increasing shift toward sustainable automotive solutions. In fields like aerospace, mostly in satellite and aircraft avionics, the demand for precision and reliability is non-negotiable. The firm's technical contributions provide the steadfast reliability required for these dangerous operations. This adherence to high standards has driven substantial progress in both the automotive and aerospace industries.

IRF640N Packaging

Comparable Parts

Part Number	Manufacturer	Mount	Package / Case	Continuous Drain Current (ID)	Current - Continuous Drain (Id) @ 25°C	Threshold Voltage	Gate to Source Voltage (Vgs)	Power Dissipation-Max	Power Dissipation	View Compare
IRF640NPBF	Infineon Technologies	Through Hole	TO-220-3	18 A	18A (Tc)	2 V	20 V	150W (Tc)	150 W
IRF3315PBF	Infineon Technologies	Through Hole	TO-220-3	27 A	23A (Tc)	4 V	20 V	94W (Tc)	136 W	IRF640NPBF VS IRF3315PBF
FQP19N20C	ON Semiconductor	Through Hole	TO-220-3	19 A	19A (Tc)	4 V	30 V	139W (Tc)	139 W	IRF640NPBF VS FQP19N20C
IRF644PBF	Vishay Siliconix	Through Hole	TO-220-3	18 A	18A (Tc)	4 V	20 V	125W (Tc)	125 W	IRF640NPBF VS IRF644PBF
IRF640PBF	Vishay Siliconix	Through Hole	TO-220-3	14 A	14A (Tc)	4 V	20 V	125W (Tc)	125 W	IRF640NPBF VS IRF640PBF

Datasheet PDF

IRFB23N20D Datasheets:

IRFB23N20D, IRFS(L)23N20D.pdf

FQP19N20C Datasheets:

TO220B03 Pkg Drawing.pdf

FQP19N20C, FQPF19N20C.pdf

IRF644PBF Datasheets:

IRF644.pdf

IRF640PBF Datasheets:

IRF640, SiHF640.pdf

Frequently Asked Questions (FAQ)

1. How many channels does the IRF640N have?

The IRF640N features a single channel. This is the ultimate characteristic of many MOSFET devices, simplifying the design and integration into circuits while making them approachable for various applications.

2. What is the continuous drain current for the IRF640N?

The continuous drain current is specified at Vgs = 18V. Understanding this parameter is useful to grasp the current capacity of the MOSFET under different gate-source voltages. It highlights the device's capability for high-efficiency switching applications.

3. Can the IRF640N operate at 100°C?

Yes, the IRF640N can function at 100°C within its recommended operating temperature range of -55°C to 175°C. Operating at such elevated temperatures requires careful thermal management to ensure the device's longevity and reliability, reflecting practical aspects of thermal design in actual situations.

4. How many pins are there in the IRF640N?

The IRF640N has three pins: gate, drain, and source. This typical configuration is used for the MOSFET's proper functioning and interfacing in various electronic circuits, helping it seamlessly integrate into complex systems.

5. What are the dimensions of the IRF640N?

Height: 15.65mm.

Length: 10mm.

Width: 4.4mm.

These dimensions hold significance for physical design considerations in high-density electronics, emphasizing the importance of precise component placement and thermal management on compact circuit boards.