Manufacturer Part Number
IRF640PBF
Manufacturer
Vishay / Siliconix
Introduction
The IRF640PBF is a power MOSFET transistor from Vishay/Siliconix, designed for high-power switching applications.
Product Features and Performance
N-channel MOSFET with a drain-source voltage rating of 200V
Continuous drain current of 18A at 25°C
Low on-resistance of 180mΩ at 11A, 10V
High input capacitance of 1300pF at 25V
Maximum power dissipation of 125W at 25°C
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Robust design for reliable performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 180mΩ @ 11A, 10V
Continuous Drain Current (Id): 18A @ 25°C
Input Capacitance (Ciss): 1300pF @ 25V
Power Dissipation (Pd): 125W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed for high-reliability applications
Compatibility
Suitable for a wide range of power switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
The IRF640PBF is an established product, and Vishay/Siliconix continues to offer it as part of their product portfolio.
Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding applications
Low on-resistance for efficient power switching and reduced power losses
Robust design for reliable performance in various environments
Widely compatible with a range of power switching applications
Ongoing availability and support from the manufacturer