Manufacturer Part Number
IRF640SPBF
Manufacturer
Vishay / Siliconix
Introduction
High-Performance N-Channel MOSFET
Product Features and Performance
200V Drain-Source Voltage
18A Continuous Drain Current at 25°C
180mΩ On-Resistance at 10V Gate-Source Voltage
Low Gate Charge of 70nC at 10V
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
Efficient power conversion and control
Reliable high-voltage switching
Low conduction losses
Compact DPAK surface-mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 180mΩ @ 11A, 10V
Continuous Drain Current (Id): 18A @ 25°C
Input Capacitance (Ciss): 1300pF @ 25V
Power Dissipation: 3.1W @ 25°C, 130W @ 100°C
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) surface-mount package
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial automation and control
Telecommunications equipment
Automotive electronics
Product Lifecycle
Currently in production, with no plans for discontinuation. Replacement and upgrade options available.
Key Reasons to Choose
Excellent performance and efficiency
Reliable high-voltage operation
Compact and easy to integrate
Wide operating temperature range
RoHS compliance for safety and sustainability