Manufacturer Part Number
IRF640NPBF
Manufacturer
Infineon Technologies
Introduction
The IRF640NPBF is a n-channel power MOSFET from Infineon Technologies, designed for high-power switching applications.
Product Features and Performance
High drain-source voltage rating of 200V
Low on-resistance of 150mΩ at 11A, 10V
Continuous drain current of 18A at 25°C
Wide operating temperature range of -55°C to 175°C
Fast switching capabilities with low gate charge of 67nC at 10V
Robust and reliable performance
Product Advantages
Excellent performance for high-power switching applications
Efficient power delivery with low on-resistance
Wide temperature range for versatile use
Fast switching for high-frequency applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 150mΩ @ 11A, 10V
Continuous Drain Current (Id): 18A @ 25°C
Input Capacitance (Ciss): 1160pF @ 25V
Power Dissipation (Pd): 150W @ Tc
Quality and Safety Features
RoHS3 compliant
Robust TO-220AB package
Designed for reliable and safe operation
Compatibility
Compatible with various high-power switching applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Power amplifiers
Telecommunications equipment
Product Lifecycle
The IRF640NPBF is a mature and widely-used product
Replacement or upgrade options are available from Infineon
Key Reasons to Choose This Product
Excellent performance and efficiency for high-power switching
Wide operating temperature range and robust design
Fast switching capabilities for high-frequency applications
Proven reliability and long-term availability