Manufacturer Part Number
SQ2348ES-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
N-channel enhancement-mode power MOSFET
Product Features and Performance
Low on-resistance (Rds(on)) for high efficiency
Fast switching for high-frequency operation
Suitable for power supply, motor drive, and amplifier applications
Product Advantages
Optimized for high-frequency, high-efficiency switching applications
Excellent thermal characteristics enable high power density
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V
Current Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various power supply, motor drive, and amplifier designs
Application Areas
Power supply circuits
Motor drive applications
Switching amplifiers
Product Lifecycle
Currently in production, with no known plans for discontinuation
Replacement or upgrade options available as needed
Several Key Reasons to Choose This Product
Excellent efficiency and thermal performance for high-frequency, high-power applications
Fast switching capability for improved system performance
Robust design and RoHS compliance for reliability and environmental friendliness
Broad compatibility and application flexibility