Manufacturer Part Number
SQ2319ADS-T1_BE3
Manufacturer
Vishay / Siliconix
Introduction
The SQ2319ADS-T1_BE3 is a P-Channel MOSFET transistor from Vishay / Siliconix's TrenchFET series.
Product Features and Performance
Automotive-grade, AEC-Q101 qualified
Low on-resistance (RDS(on) max of 75 mΩ)
High drain current (4.6 A continuous at 25°C)
Wide operating temperature range (-55°C to 150°C)
Low gate charge (16 nC max at 10 V)
Low input capacitance (620 pF max at 20 V)
Product Advantages
Excellent thermal performance
Robust and reliable for automotive applications
Low power loss and high efficiency
Key Technical Parameters
Drain to Source Voltage (Vdss): 40 V
Gate to Source Voltage (Vgs max): ±20 V
RDS(on) max: 75 mΩ @ 3 A, 10 V
Drain Current (Id) max: 4.6 A at 25°C
Input Capacitance (Ciss) max: 620 pF @ 20 V
Power Dissipation (Pd) max: 2.5 W at Tc
Quality and Safety Features
Automotive-grade, AEC-Q101 qualified
Reliable and robust design for harsh environments
Compatibility
Compatible with standard MOSFET drivers and control circuits
Application Areas
Automotive electronics
Industrial power supplies
Motor control
Battery management systems
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent thermal and electrical performance for automotive applications
Robust and reliable design for harsh environments
Low power loss and high efficiency
Wide operating temperature range
Automotive-grade qualification (AEC-Q101)
SQ2325ES-T1-GE3Electro-Films (EFI) / Vishay