Manufacturer Part Number
SQ2337ES-T1_BE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Single
Product Features and Performance
P-Channel MOSFET
80V Drain-Source Voltage
±20V Gate-Source Voltage
290mOhm On-Resistance @ 1.2A, 10V
2A Continuous Drain Current @ 25°C
620pF Input Capacitance @ 40V
3W Power Dissipation
-55°C to 175°C Operating Temperature Range
Product Advantages
Automotive, AEC-Q101 qualified
TrenchFET technology
Surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 80V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 290mOhm @ 1.2A, 10V
Continuous Drain Current (Id): 2.2A @ 25°C
Input Capacitance (Ciss): 620pF @ 40V
Power Dissipation (Pd): 3W
Quality and Safety Features
AEC-Q101 qualified for automotive applications
Robust TrenchFET technology
Compatibility
SOT-23-3 (TO-236) surface mount package
Application Areas
Automotive electronics
Power management
Switch mode power supplies
Product Lifecycle
Current product offering, no discontinuation plans
Key Reasons to Choose
Automotive-grade reliability
Low on-resistance for efficient power switching
High voltage handling capability
Small surface mount package