Manufacturer Part Number
SQ2351ES-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
Vishay/Siliconix SQ2351ES-T1_GE3 is a P-Channel MOSFET transistor in a SOT-23-3 (TO-236) package.
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology
P-Channel type
Drain-to-Source Voltage (Vdss) of 20V
Maximum Gate-to-Source Voltage (Vgs) of ±12V
On-State Resistance (Rds(on)) of 115mΩ at 2.4A, 4.5V
Continuous Drain Current (Id) of 3.2A at 25°C
Input Capacitance (Ciss) of 330pF at 10V
Power Dissipation (Pd) of 2W at Tc
Product Advantages
Suitable for automotive and industrial applications
Compliant with AEC-Q101 (Automotive Electronics Council) standard
Tape and reel packaging for efficient assembly
Wide operating temperature range of -55°C to 175°C
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±12V
On-State Resistance (Rds(on)): 115mΩ
Continuous Drain Current (Id): 3.2A
Input Capacitance (Ciss): 330pF
Power Dissipation (Pd): 2W
Quality and Safety Features
RoHS3 compliant
Automotive-grade quality and reliability
Compatibility
Suitable for surface mount (SMT) assembly
Compatible with standard MOSFET driver circuits
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Motor control applications
Product Lifecycle
This product is currently in production and widely available.
Replacement or upgrade options may be available from Vishay/Siliconix or other MOSFET manufacturers.
Key Reasons to Choose This Product
Automotive-grade quality and reliability
Wide operating temperature range
Low on-state resistance for efficient power switching
Compact SOT-23-3 (TO-236) package for space-constrained designs
Compatibility with standard MOSFET driver circuits
Tape and reel packaging for efficient assembly
SQ2328ES-T1-GE3Electro-Films (EFI) / Vishay