Manufacturer Part Number
SQ2361EES-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel TrenchFET MOSFET in a small SOT-23-3 package.
Product Features and Performance
60V drain-to-source voltage
Low on-resistance of 150mΩ @ 2.4A, 10V
Fast switching speed
Low gate charge of 17nC @ 10V
Operating temperature range of -55°C to 175°C
Continuous drain current of 2.5A at 25°C
Product Advantages
Efficient power conversion
Compact size for space-constrained designs
Reliable operation in harsh environments
Key Technical Parameters
Drain-to-source voltage (Vdss): 60V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 150mΩ @ 2.4A, 10V
Continuous drain current (Id): 2.5A @ 25°C
Input capacitance (Ciss): 545pF @ 30V
Power dissipation (Pd): 2W @ Tc
Quality and Safety Features
RoHS3 compliant
Surge and ESD protection
Compatibility
Surface mount SOT-23-3 (TO-236) package
Suitable for use in a wide range of applications
Application Areas
Power management circuits
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and available for purchase.
Replacement and upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
High efficiency and low power loss due to low on-resistance
Compact size and surface mount package for space-constrained designs
Wide operating temperature range for use in harsh environments
Reliable performance and protection against surges and ESD
Compatibility with a wide range of applications