Manufacturer Part Number
SQ2362ES-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistor - FET, MOSFET - Single
Product Features and Performance
Automotive, AEC-Q101, TrenchFET series
N-Channel MOSFET
Drain to Source Voltage (Vdss): 60V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Current Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10V
Product Advantages
Automotive-grade quality and reliability
Excellent power handling capabilities
Low on-resistance for high efficiency
Compact surface mount package
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Manufacturer's packaging: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Package: Tape & Reel (TR)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
Power management circuits
Motor control
Switching power supplies
Automotive electronics
Product Lifecycle
Current production model
Replacement and upgrade options available
Several Key Reasons to Choose This Product
Automotive-grade quality and reliability
Excellent power handling and efficiency
Compact surface mount package
Wide operating temperature range
Comprehensive technical specifications and parameters
SQ2362ES-T1Electro-Films (EFI) / Vishay