Manufacturer Part Number
SQ2398ES-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
This is a discrete semiconductor product, specifically a single transistor FET (Field-Effect Transistor) in the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) category.
Product Features and Performance
Automotive, AEC-Q101 qualified
TrenchFET technology
Operating temperature range: -55°C to 175°C
High drain-to-source voltage: 100V
Low on-resistance: 300mOhm @ 1.5A, 10V
Continuous drain current: 1.6A (at 25°C)
Input capacitance: 152pF @ 50V
Power dissipation: 2W (at Tc)
N-channel FET type
Gate threshold voltage: 3.5V @ 250A
Gate charge: 3.4nC @ 10V
Product Advantages
Automotive and high-temperature qualified
Low on-resistance for efficient power handling
Compact surface-mount packaging
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 300mOhm
Continuous Drain Current (Id): 1.6A
Input Capacitance (Ciss): 152pF
Power Dissipation (Pd): 2W
Quality and Safety Features
AEC-Q101 automotive qualification
Reliable TrenchFET technology
Compatibility
Surface-mount, SOT-23-3 (TO-236) package
Can be used in a variety of electronic circuits and applications
Application Areas
Automotive electronics
Industrial power management
Consumer electronics
General-purpose power switching
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from Vishay or other manufacturers.
Key Reasons to Choose This Product
Automotive and high-temperature qualification for reliable operation
Low on-resistance for efficient power handling
Compact surface-mount packaging for space-constrained designs
Broad compatibility and application areas