Manufacturer Part Number
SQ2364EES-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
This product is a discrete semiconductor transistor, specifically a single N-Channel TrenchFET MOSFET.
Product Features and Performance
60V Drain to Source Voltage
240mΩ maximum On-Resistance at 2A, 4.5V
2A continuous drain current at 25°C
330pF maximum Input Capacitance at 25V
3W maximum Power Dissipation at Tc
Operates in the temperature range of -55°C to 175°C
Product Advantages
Automotive and AEC-Q101 qualified
Robust TrenchFET technology
Small SOT-23-3 package
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Maximum Gate-Source Voltage (Vgs): ±8V
Threshold Voltage (Vgs(th)): 1V at 250μA
On-Resistance (Rds(on)): 240mΩ at 2A, 4.5V
Input Capacitance (Ciss): 330pF at 25V
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
This MOSFET is suitable for a variety of automotive and industrial applications.
Application Areas
Automotive electronics
Power management
Motor control
Switch-mode power supplies
Product Lifecycle
This product is an active and currently available part. No end-of-life or discontinuation information is provided.
Key Reasons to Choose This Product
Automotive and AEC-Q101 qualified for reliable performance
Low on-resistance and high current handling capability
Small, space-saving SOT-23-3 package
Robust TrenchFET technology for enhanced reliability
Wide operating temperature range of -55°C to 175°C