SQ2303ES-T1_GE3 - Vishay Siliconix

Manufacturer Part Number

SQ2303ES-T1_GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Single

Product Features and Performance

P-Channel MOSFET

AEC-Q101 qualified for automotive applications

High efficiency and fast switching

Low on-resistance

Low gate charge

Product Advantages

Optimized for automotive and industrial applications

Excellent power conversion efficiency

Improved system reliability and performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Vgs (Max): ±20 V

Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.8 A, 10 V

Continuous Drain Current (Id) @ 25°C: 2.5 A

Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V

Power Dissipation (Max): 1.9 W

Vgs(th) (Max) @ Id: 2.5 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On): 4.5 V, 10 V

Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V

Quality and Safety Features

ROHS3 Compliant

AEC-Q101 qualified

Compatibility

Surface Mount

Application Areas

Automotive electronics

Industrial power conversion

General purpose power switching

Product Lifecycle

Current product

Replacements and upgrades available

Key Reasons to Choose This Product

Optimized for automotive and industrial applications

Excellent power conversion efficiency

Improved system reliability and performance

AEC-Q101 qualified for automotive applications

Low on-resistance and gate charge for high efficiency

Wide operating temperature range (-55°C to 175°C)