SQ2310ES-T1_GE3 - Vishay Siliconix

Manufacturer Part Number

SQ2310ES-T1_GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product, Transistor - FET, MOSFET - Single

Product Features and Performance

N-Channel MOSFET

20V Drain to Source Voltage (Vdss)

±8V Gate to Source Voltage (Vgs)

30mOhm Rds On @ 5A, 4.5V

6A Continuous Drain Current (Id) @ 25°C

485pF Input Capacitance (Ciss) @ 10V

2W Power Dissipation (Max) @ Tc

1V Gate Threshold Voltage (Vgs(th)) @ 250A

5V to 4.5V Drive Voltage Range

5nC Gate Charge (Qg) @ 4.5V

Product Advantages

High performance N-Channel MOSFET

Low on-resistance for efficient power switching

Wide operating temperature range (-55°C to 175°C)

Surface mount package for high-density designs

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Gate to Source Voltage (Vgs): ±8V

On-resistance (Rds On): 30mOhm

Continuous Drain Current (Id): 6A

Input Capacitance (Ciss): 485pF

Power Dissipation (Max): 2W

Quality and Safety Features

RoHS3 compliant

Designed for reliable and safe operation

Compatibility

Compatible with a wide range of electronic circuits and applications

Application Areas

Power management

Motor control

Switching power supplies

General-purpose power switching

Product Lifecycle

Current product, no discontinuation planned

Replacements and upgrades available as needed

Key Reasons to Choose This Product

Excellent performance characteristics for efficient power switching

Wide operating temperature range for versatile applications

Surface mount package for high-density design integration

Reliable and safe operation backed by RoHS3 compliance

Broad compatibility and availability of replacements/upgrades