Manufacturer Part Number
SQ2309ES-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete semiconductor product
P-channel MOSFET transistor
Product Features and Performance
Automotive-qualified AEC-Q101
TrenchFET technology
Wide operating temperature range of -55°C to 175°C
Low on-resistance up to 336 mΩ
High drain current up to 1.7A
Low input capacitance of 265 pF
Max power dissipation of 2W
Gate charge of 8.5 nC
Product Advantages
Excellent thermal performance
High reliability for automotive applications
Low power loss
Compact and efficient design
Key Technical Parameters
Drain-to-source voltage (Vdss): 60V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 336 mΩ
Continuous drain current (Id): 1.7A
Input capacitance (Ciss): 265 pF
Power dissipation (Pd): 2W
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualified
Compatibility
Surface mount package: SOT-23-3 (TO-236)
Tape and reel packaging
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available if needed
Key Reasons to Choose This Product
High reliability and performance for automotive applications
Compact and efficient design
Low power loss and thermal management
Wide operating temperature range
Automotive-grade quality and safety certifications
SQ2309ES-T1-GE3Electro-Films (EFI) / Vishay