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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleSQ2315ES-T1_GE3
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SQ2315ES-T1_GE3 - Vishay Siliconix

Manufacturer Part Number
SQ2315ES-T1_GE3
Manufacturer
Vishay / Siliconix
Allelco Part Number
32D-SQ2315ES-T1_GE3
ECAD Model
Parts Description
MOSFET P-CH 12V 5A SOT23-3
Detailed Description
Package
TO-236-3, SC-59, SOT-23-3
Data sheet
SQ2315ES.pdf
RoHs Status
ROHS3 Compliant
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In stock: 179110

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Specifications

SQ2315ES-T1_GE3 Tech Specifications
Vishay Siliconix - SQ2315ES-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix - SQ2315ES-T1_GE3

Product Attribute Attribute Value  
Manufacturer Vishay / Siliconix  
Vgs(th) (Max) @ Id 1V @ 250µA  
Vgs (Max) ±8V  
Technology MOSFET (Metal Oxide)  
Supplier Device Package SOT-23-3 (TO-236)  
Series Automotive, AEC-Q101, TrenchFET®  
Rds On (Max) @ Id, Vgs 50mOhm @ 3.5A, 10V  
Power Dissipation (Max) 2W (Tc)  
Package / Case TO-236-3, SC-59, SOT-23-3  
Package Tape & Reel (TR)  
Product Attribute Attribute Value  
Operating Temperature -55°C ~ 150°C (TJ)  
Mounting Type Surface Mount  
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 4 V  
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5 V  
FET Type P-Channel  
FET Feature -  
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V  
Drain to Source Voltage (Vdss) 12 V  
Current - Continuous Drain (Id) @ 25°C 5A (Tc)  
Base Product Number SQ2315  

Parts Introduction

Manufacturer Part Number

SQ2315ES-T1_GE3

Manufacturer

Vishay / Siliconix

Introduction

P-Channel Automotive MOSFET with Trench Technology

Product Features and Performance

Optimized for Automotive Applications

Trench Technology for Low RDS(on)

Low Gate Charge for Fast Switching

Wide Operating Temperature Range: -55°C to 150°C

High Current Capability: 5A Continuous Drain Current

Product Advantages

Excellent Thermal Performance

Robust Design for Automotive Use

Fast Switching Capability

Optimized for High Efficiency Power Conversion

Key Technical Parameters

Drain to Source Voltage (VDS): 12V

Gate to Source Voltage (VGS): ±8V

On-Resistance (RDS(on)): 50mΩ @ 3.5A, 10V

Input Capacitance (Ciss): 870pF @ 4V

Power Dissipation (PD): 2W

Quality and Safety Features

RoHS3 Compliant

AEC-Q101 Qualified for Automotive Use

Compatibility

Surface Mount (SOT-23-3) Package

Application Areas

Automotive Electronics

Power Management Circuits

Motor Control

Switching Power Supplies

Product Lifecycle

Current Product

Replacements and Upgrades Available

Key Reasons to Choose

Optimized for Automotive Applications

Low On-Resistance for High Efficiency

Fast Switching Capability

Wide Operating Temperature Range

Robust Design for Reliable Performance

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay Siliconix SQ2315ES-T1_GE3

Product Attribute SQ2315ES-T1_GE3 SQ2309ES-T1_GE3 SQ2309ES-T1_BE3 SQ2319ADS-T1_BE3
Part Number SQ2315ES-T1_GE3 SQ2309ES-T1_GE3 SQ2309ES-T1_BE3 SQ2319ADS-T1_BE3
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Base Product Number SQ2315 SQ2309 SQ2309 SQ2319
Package Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vgs (Max) ±8V ±20V ±20V ±20V
FET Type P-Channel P-Channel P-Channel P-Channel
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 4 V 265 pF @ 25 V 265 pF @ 25 V 620 pF @ 20 V
Vgs(th) (Max) @ Id 1V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Series Automotive, AEC-Q101, TrenchFET® Automotive, AEC-Q101, TrenchFET® Automotive, AEC-Q101, TrenchFET® Automotive, AEC-Q101, TrenchFET®
Power Dissipation (Max) 2W (Tc) 2W (Tc) 2W (Tc) 2.5W (Tc)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 5A (Tc) 1.7A (Tc) 1.7A (Tc) 4.6A (Tc)
Rds On (Max) @ Id, Vgs 50mOhm @ 3.5A, 10V 336mOhm @ 3.8A, 10V 335mOhm @ 1.25A, 10V 75mOhm @ 3A, 10V
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature - - - -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 60 V 60 V 40 V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5 V 8.5 nC @ 10 V 8.5 nC @ 10 V 16 nC @ 10 V

SQ2315ES-T1_GE3 Datasheet PDF

Download SQ2315ES-T1_GE3 pdf datasheets and Vishay Siliconix documentation for SQ2315ES-T1_GE3 - Vishay Siliconix.

Datasheets
SQ2315ES.pdf

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In-stock items can be shipped within 24 hours. Some parts will be arranged for delivery within 1-2 days from the date all items arrive at our warehouse. And Allelco ships order once a day at about 17:00, except Sunday. Once the goods are shipped, the estimated delivery time depends on the shipping methods and Delivery destination. The table below shows are the logistic time for some common countries.

Delivery Cost

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  2. Use our account for the shipment. Refer to the table below for the approximate charges.
(Different time frame / countries / package size has different price.)

Delivery Method

  1. Global Common Shipment by DHL / UPS / FedEx / TNT / EMS / SF we support.
  2. Others more shipping ways, please get in touch with your customer manager.

Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

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    +00852 9146 4856

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SQ2315ES-T1_GE3 Image

SQ2315ES-T1_GE3

Vishay Siliconix
32D-SQ2315ES-T1_GE3

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