Manufacturer Part Number
SQ2308CES-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single N-Channel MOSFET Transistor
Product Features and Performance
AEC-Q101 qualified for automotive applications
Trench MOSFET technology
Low on-resistance (Rds(on) = 150mΩ @ 2.3A, 10V)
High drain current handling (2.3A continuous @ 25°C)
Wide operating temperature range (-55°C to 175°C)
Low gate charge (Qg = 5.3nC @ 10V)
Small footprint SOT-23-3 (TO-236) package
Product Advantages
Robust and reliable automotive-grade performance
Efficient power handling and low conduction losses
Compact package for space-constrained designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 150mΩ @ 2.3A, 10V
Drain Current (Id): 2.3A continuous @ 25°C
Input Capacitance (Ciss): 205pF @ 30V
Power Dissipation (Tc): 2W
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Surface mount SOT-23-3 (TO-236) package
Application Areas
Automotive electronics
Power management circuits
Motor control
Switching and linear regulators
Product Lifecycle
Current production
Replacements and upgrades available
Key Reasons to Choose This Product
Robust automotive-grade performance
Efficient power handling with low on-resistance
Compact and space-saving package
Wide operating temperature range
AEC-Q101 qualification for reliability
SQ2309ESVishay