SQ2301ES-T1_GE3 - Vishay Siliconix

Manufacturer Part Number

SQ2301ES-T1_GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Single

Product Features and Performance

ROHS3 Compliant

TO-236 (SOT-23) Package

Surface Mount Mounting

Automotive, AEC-Q101, TrenchFET Series

Operating Temperature: -55°C ~ 175°C (TA)

Drain to Source Voltage (Vdss): 20 V

Gate-Source Voltage (Vgs) Max: ±8V

On-State Resistance (Rds On) Max: 120mOhm @ 2.8A, 4.5V

MOSFET (Metal Oxide) Technology

Continuous Drain Current (Id) Max: 3.9A (Tc)

Input Capacitance (Ciss) Max: 425 pF @ 10 V

Power Dissipation Max: 3W (Tc)

P-Channel FET Type

Threshold Voltage (Vgs(th)) Max: 1.5V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V

Gate Charge (Qg) Max: 8 nC @ 4.5 V

Product Advantages

Automotive, AEC-Q101 qualified

Low on-state resistance

High temperature operation

High power handling capability

Key Technical Parameters

Drain to Source Voltage (Vdss): 20 V

Gate-Source Voltage (Vgs) Max: ±8V

On-State Resistance (Rds On) Max: 120mOhm

Continuous Drain Current (Id) Max: 3.9A

Input Capacitance (Ciss) Max: 425 pF

Power Dissipation Max: 3W

Threshold Voltage (Vgs(th)) Max: 1.5V

Gate Charge (Qg) Max: 8 nC

Quality and Safety Features

ROHS3 Compliant

Automotive, AEC-Q101 qualified

Compatibility

Surface Mount

TO-236 (SOT-23) Package

Application Areas

Automotive electronics

Power management

Switching circuits

Product Lifecycle

No information on discontinuation or replacement

Several Key Reasons to Choose This Product

Automotive, AEC-Q101 qualified for high reliability

Low on-state resistance for efficient power handling

High temperature operation up to 175°C

High power handling capability up to 3W