Manufacturer Part Number
SIS892DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Vishay/Siliconix SIS892DN-T1-GE3 is a high-performance N-channel MOSFET transistor designed for a wide range of power management and control applications.
Product Features and Performance
100 V drain-to-source voltage
30 A continuous drain current
Low on-resistance of 29 mΩ
Ultra-low gate charge of 21.5 nC
Wide operating temperature range of -55°C to 150°C
Compact PowerPAK 1212-8 package
Product Advantages
Excellent power efficiency due to low on-resistance
Fast switching speed and low gate charge for high-frequency operation
Compact and thermally efficient package for space-constrained designs
Robust performance over a wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100 V
Gate-to-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 29 mΩ @ 10 A, 10 V
Continuous Drain Current (Id): 30 A @ 25°C
Input Capacitance (Ciss): 611 pF @ 50 V
Power Dissipation (Ptot): 3.7 W (Ta), 52 W (Tc)
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
Compatible with a wide range of power management, motor control, and other power electronic applications.
Application Areas
Power supplies
Motor drives
Switching regulators
Amplifiers
Industrial and consumer electronics
Product Lifecycle
The SIS892DN-T1-GE3 is an active product, and Vishay/Siliconix continues to offer support and availability. There are no immediate plans for discontinuation, and replacement or upgrade options may be available if needed.
Key Reasons to Choose This Product
Excellent power efficiency and performance due to low on-resistance and fast switching
Compact and thermally efficient package for space-constrained designs
Robust performance over a wide temperature range
RoHS3 compliance for environmentally friendly applications
Broad compatibility and suitability for a wide range of power electronics applications
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