Manufacturer Part Number
SIS892ADN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
High-performance TrenchFET technology
Low on-resistance (Rds(on))
Fast switching speed
Wide operating temperature range (-55°C to 150°C)
High power handling capability (3.7W at Ta, 52W at Tc)
Product Advantages
Efficient power conversion and control
Suitable for various power management applications
Reliable and durable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Maximum Gate-Source Voltage (Vgs(max)): ±20V
On-Resistance (Rds(on)): 33mΩ @ 10A, 10V
Continuous Drain Current (Id): 28A @ 25°C
Input Capacitance (Ciss): 550pF @ 50V
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount assembly
Compatibility
Compatible with various power management and control applications
Application Areas
Power conversion and control
Motor control
Switch-mode power supplies
Automotive electronics
Industrial automation
Product Lifecycle
Current product offering
No indication of discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High-performance TrenchFET technology for efficient power management
Low on-resistance and fast switching speed for improved system efficiency
Wide operating temperature range and high power handling capability for versatile applications
Reliable and durable construction for long-term reliable operation
RoHS3 compliance for environmental compliance
SIS903DN-T1-GE3Vishay