SIS888DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIS888DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Single

Product Features and Performance

N-Channel MOSFET

Drain to Source Voltage (Vdss) of 150 V

Vgs (Max) of ±20 V

Rds On (Max) of 58 mOhm @ 10 A, 10 V

Continuous Drain Current (Id) of 20.2 A @ 25°C (Tc)

Input Capacitance (Ciss) of 420 pF @ 75 V

Power Dissipation (Max) of 52 W (Tc)

Vgs(th) (Max) of 4.2 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On) of 7.5 V, 10 V

Gate Charge (Qg) (Max) of 14.5 nC @ 10 V

Product Advantages

Efficient power switching performance

High voltage and current handling capabilities

Low on-resistance for low power loss

Compact surface mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 150 V

Vgs (Max): ±20 V

Rds On (Max) @ Id, Vgs: 58 mOhm @ 10 A, 10 V

Continuous Drain Current (Id) @ 25°C: 20.2 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 75 V

Power Dissipation (Max): 52 W (Tc)

Vgs(th) (Max) @ Id: 4.2 V @ 250 A

Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V

Quality and Safety Features

RoHS3 Compliant

Wide operating temperature range of -55°C to 150°C (TA)

Compatibility

Mounting Type: Surface Mount

Application Areas

Efficient power switching applications

Industrial and consumer electronics

Power supplies and motor drives

Product Lifecycle

Currently available

No information on discontinuation or replacements/upgrades

Key Reasons to Choose This Product

High voltage and current handling capabilities

Low on-resistance for efficient power switching

Compact surface mount package

Wide operating temperature range

RoHS3 compliant for environmental safety