Manufacturer Part Number
SIS890DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This product is a high-performance N-channel MOSFET transistor that is part of the TrenchFET series.
Product Features and Performance
Drain to Source Voltage (Vdss) of 100 V
Maximum Gate-Source Voltage (Vgs) of ±20 V
On-State Resistance (Rds(on)) of 23.5 mΩ at 10 A and 10 V
Continuous Drain Current (Id) of 30 A at 25°C
Input Capacitance (Ciss) of 802 pF at 50 V
Maximum Power Dissipation of 3.7 W at Ta or 52 W at Tc
Operating Temperature Range of -55°C to 150°C
Product Advantages
High power handling capabilities
Low on-state resistance for efficient power conversion
Rugged and reliable design for demanding applications
Key Technical Parameters
N-Channel MOSFET Transistor
ROHS3 Compliant
PowerPAK 1212-8 Package
Tape & Reel (TR) Packaging
Quality and Safety Features
Compliant with RoHS 3 directive
Reliable and robust design for industrial and automotive applications
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and power management systems.
Application Areas
Power supplies
Motor drives
Industrial and automotive electronics
Switching and control circuits
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High-performance power handling capabilities
Low on-state resistance for efficient power conversion
Reliable and robust design for demanding applications
Compatibility with a wide range of electronic systems
Availability of the product and potential upgrade options
SIS892ADNVishay