SIS862DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIS862DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel power MOSFET for power supply, motor drive, and other power management applications.

Product Features and Performance

Low RDS(on) of 8.5 mΩ at 20 A, 10 V

High current capability of 40 A at 25°C

Fast switching speed and low gate charge

Wide operating temperature range of -55°C to 150°C

Rugged and reliable TrenchFET technology

Product Advantages

Excellent efficiency and thermal performance

Compact and space-saving PowerPAK 1212-8 package

Suitable for high-power, high-frequency applications

Key Technical Parameters

Drain-to-Source Voltage (VDS): 60 V

Gate-to-Source Voltage (VGS): ±20 V

Drain Current (ID): 40 A at 25°C

On-State Resistance (RDS(on)): 8.5 mΩ at 20 A, 10 V

Input Capacitance (Ciss): 1,320 pF at 30 V

Power Dissipation (PD): 3.7 W at 25°C, 52 W at 100°C

Quality and Safety Features

RoHS3 compliant

Reliable and robust TrenchFET technology

Compatibility

Suitable for power supply, motor drive, and other power management applications

Application Areas

Power supplies

Motor drives

Power management circuits

Product Lifecycle

Currently available

No discontinuation or replacement plans announced

Several Key Reasons to Choose This Product

Excellent efficiency and thermal performance

High current capability and low on-state resistance

Fast switching speed and low gate charge

Wide operating temperature range

Compact and space-saving package

Reliable and robust TrenchFET technology