Manufacturer Part Number
SIHG47N60EF-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SIHG47N60EF-GE3 is a high-performance N-channel MOSFET transistor from Vishay / Siliconix, designed for a wide range of power electronic applications.
Product Features and Performance
High drain-source voltage rating of 600V
Low on-resistance of 67mOhm @ 24A, 10V
High continuous drain current rating of 47A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 4854pF @ 100V
High power dissipation capability of 379W at Tc
Product Advantages
Excellent efficiency and low power loss
Robust and reliable performance
Suitable for high-power, high-voltage applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 67mOhm @ 24A, 10V
Continuous Drain Current (Id): 47A @ 25°C
Input Capacitance (Ciss): 4854pF @ 100V
Power Dissipation (Pd): 379W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-247AC package with through-hole mounting
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, inverters, and other high-power circuits.
Application Areas
Industrial electronics
Power conversion and control
Inverters and motor drives
Switching power supplies
Lighting and energy management systems
Product Lifecycle
Currently in production
No known discontinuation plans
Replacement or upgrade options available from Vishay / Siliconix
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust and reliable design
Suitable for high-power, high-voltage applications
Wide operating temperature range
RoHS3 compliance for environmental friendliness
Availability of replacement and upgrade options
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