SIHG47N60EF-GE3 - Vishay Siliconix

Manufacturer Part Number

SIHG47N60EF-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SIHG47N60EF-GE3 is a high-performance N-channel MOSFET transistor from Vishay / Siliconix, designed for a wide range of power electronic applications.

Product Features and Performance

High drain-source voltage rating of 600V

Low on-resistance of 67mOhm @ 24A, 10V

High continuous drain current rating of 47A at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 4854pF @ 100V

High power dissipation capability of 379W at Tc

Product Advantages

Excellent efficiency and low power loss

Robust and reliable performance

Suitable for high-power, high-voltage applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 600V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 67mOhm @ 24A, 10V

Continuous Drain Current (Id): 47A @ 25°C

Input Capacitance (Ciss): 4854pF @ 100V

Power Dissipation (Pd): 379W @ Tc

Quality and Safety Features

RoHS3 compliant

TO-247AC package with through-hole mounting

Compatibility

Suitable for a wide range of power electronics applications, including motor drives, power supplies, inverters, and other high-power circuits.

Application Areas

Industrial electronics

Power conversion and control

Inverters and motor drives

Switching power supplies

Lighting and energy management systems

Product Lifecycle

Currently in production

No known discontinuation plans

Replacement or upgrade options available from Vishay / Siliconix

Key Reasons to Choose This Product

Excellent performance and efficiency

Robust and reliable design

Suitable for high-power, high-voltage applications

Wide operating temperature range

RoHS3 compliance for environmental friendliness

Availability of replacement and upgrade options