SIHG70N60EF-GE3 - Vishay Siliconix

Manufacturer Part Number

SIHG70N60EF-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel power MOSFET with low on-resistance and high current handling capability.

Product Features and Performance

Extremely low on-resistance of 38 mΩ

Continuous drain current of 70A at 25°C

Drain-to-source voltage up to 600V

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 7500 pF

High power dissipation of 520W

Product Advantages

Excellent efficiency and low power loss

Robust design for high-current applications

Suitable for a wide range of operating conditions

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±30V

On-State Resistance (Rds(on)): 38 mΩ

Continuous Drain Current (Id): 70A

Input Capacitance (Ciss): 7500 pF

Power Dissipation (Tc): 520W

Threshold Voltage (Vgs(th)): 4V

Quality and Safety Features

RoHS3 compliant

TO-247AC package for enhanced thermal performance

Designed and manufactured to high quality standards

Compatibility

This MOSFET is suitable for a wide range of power electronics applications, including:

Switch-mode power supplies

Motor drives

Inverters

Converters

Application Areas

Industrial equipment

Telecom and networking equipment

Renewable energy systems

Electric vehicles

Product Lifecycle

The SIHG70N60EF-GE3 is an active and widely used product. There are no plans for discontinuation, and replacement or upgraded versions may be available in the future.

Key Reasons to Choose This Product

Excellent efficiency and low power loss

High current handling capability

Wide operating temperature range

Robust and reliable design

RoHS compliance for environmental friendliness

Suitable for a variety of power electronics applications