Manufacturer Part Number
SIHG47N65E-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-voltage, high-power N-channel MOSFET suitable for various industrial and automotive applications.
Product Features and Performance
High voltage rating of 650V
Continuous drain current of 47A at 25°C
Low on-resistance of 72mΩ at 24A, 10V
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge
Suitable for high-power, high-frequency applications
Product Advantages
Excellent power handling and efficiency
Robust and reliable performance
Compact and easy to integrate design
Key Technical Parameters
Drain-to-Source Voltage (VDS): 650V
Gate-to-Source Voltage (VGS): ±30V
On-Resistance (RDS(on)): 72mΩ @ 24A, 10V
Continuous Drain Current (ID): 47A @ 25°C
Input Capacitance (Ciss): 5682pF @ 100V
Power Dissipation (PD): 417W @ 25°C
Quality and Safety Features
RoHS3 compliant
Proven reliability and quality from Vishay/Siliconix
Compatibility
Suitable for various industrial and automotive applications requiring high-voltage, high-power MOSFETs
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Electric vehicles
Renewable energy systems
Product Lifecycle
This product is currently in production and available for purchase.
No plans for discontinuation or replacement at this time.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust and reliable performance in harsh environments
Compact and easy to integrate design
Proven quality and reliability from Vishay/Siliconix
Suitable for a wide range of high-voltage, high-power applications
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