Manufacturer Part Number
SIHG47N60E-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SIHG47N60E-GE3 is a high-voltage, high-current N-channel power MOSFET from Vishay Siliconix.
Product Features and Performance
600V drain-source voltage
47A continuous drain current at 25°C
64 mΩ maximum on-resistance at 24A, 10V
High input capacitance of 9620 pF at 100V
Maximum power dissipation of 357W at Tc
Product Advantages
Ideal for high-voltage, high-current switching applications
Low on-resistance for high efficiency
High input capacitance for fast switching
High power handling capability
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
Drain Current (Id): 47A (Tc)
On-Resistance (Rds(on)): 64 mΩ @ 24A, 10V
Input Capacitance (Ciss): 9620 pF @ 100V
Quality and Safety Features
Meets RoHS3 compliance
TO-247AC package for high thermal reliability
Operating temperature range of -55°C to 150°C
Compatibility
Suitable for high-voltage, high-current switching applications
Can be used in power supplies, motor drives, and other power electronics
Application Areas
Switching power supplies
Motor drives
Industrial and automotive power electronics
Renewable energy systems
Product Lifecycle
Current production model, no discontinuation planned
Replacement or upgrade options available from Vishay
Key Reasons to Choose This Product
High voltage and current capability
Low on-resistance for efficient operation
Fast switching performance
Reliable and thermally robust package
Compliance with RoHS3 regulations
Proven track record in high-power applications