Manufacturer Part Number
SIHG33N60EF-GE3
Manufacturer
Vishay / Siliconix
Introduction
This product is a discrete semiconductor component, specifically a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor).
Product Features and Performance
Operating temperature range: -55°C to 150°C
Drain-to-source voltage (Vdss): 600V
Maximum gate-to-source voltage (Vgs): ±30V
On-state resistance (Rds(on)): 98mΩ @ 16.5A, 10V
Continuous drain current (Id): 33A @ 25°C
Input capacitance (Ciss): 3454pF @ 100V
Power dissipation (Tc): 278W
Gate charge (Qg): 155nC @ 10V
Product Advantages
High voltage and high current capabilities
Low on-state resistance for efficient power conversion
Suitable for various power electronics and industrial applications
Key Technical Parameters
MOSFET technology
N-channel FET type
Threshold voltage (Vgs(th)): 4V @ 250A
Drive voltage range: 10V
Quality and Safety Features
RoHS3 compliant
Packaged in a TO-247AC through-hole mounting
Compatibility
This MOSFET can be used in a variety of power electronics and industrial applications where high voltage, high current, and efficient switching are required.
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial and commercial equipment
Product Lifecycle
This product is currently in production and available. There are no known plans for discontinuation or replacement at this time.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for improved efficiency
Robust and reliable performance over a wide temperature range
Suitable for a broad range of power electronics applications
RoHS3 compliance for environmentally-conscious design
SiHG30N60AEL MOSElectro-Films (EFI) / Vishay
SIHG33N60EVISHYA