Manufacturer Part Number
SIHG33N60E-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET with integrated Schottky diode
Product Features and Performance
Low on-resistance for low power loss
High avalanche energy capability
Fast switching speed for efficient operation
High-voltage capability up to 600V
Product Advantages
Reduced power consumption and heat generation
Improved efficiency and reliability
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Maximum Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 99mΩ @ 16.5A, 10V
Continuous Drain Current (Id): 33A @ 25°C
Input Capacitance (Ciss): 3508pF @ 100V
Power Dissipation (Tc): 278W
Quality and Safety Features
RoHS3 compliant
Reliable performance in high-temperature environments (-55°C to 150°C)
Compatibility
Through-hole mounting (TO-247-3 package)
Application Areas
Switching power supplies
Motor drives
Inverters
High-voltage, high-power electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrades may be available from the manufacturer.
Key Reasons to Choose This Product
High-voltage and high-current capability for demanding applications
Low on-resistance for improved efficiency and reduced power loss
Fast switching speed for enhanced system performance
Reliable operation in high-temperature environments
RoHS3 compliance for environmental responsibility