Manufacturer Part Number
SI7850DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
60V Drain to Source Voltage (Vdss)
22mΩ Max Drain-Source On-Resistance (Rds(on)) at 10.3A, 10V
2A Continuous Drain Current (Id) at 25°C
8W Max Power Dissipation at 25°C
-55°C to 150°C Operating Temperature Range
Product Advantages
Efficient power switching performance
Low on-resistance for low power loss
Wide operating temperature range
Key Technical Parameters
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Quality and Safety Features
RoHS3 Compliant
Tape & Reel (TR) packaging
Compatibility
Surface Mount Package: PowerPAK SO-8
Application Areas
Power management
Switch-mode power supplies
Motor drives
Amplifier circuits
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose
Excellent power switching performance
Low on-resistance for high efficiency
Wide operating temperature range
Compact surface mount package
RoHS3 compliance for environmental safety