SI7850DP-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7850DP-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel MOSFET with low on-resistance

Product Features and Performance

Low on-resistance of 22 mΩ @ 10.3 A, 10 V

Low gate charge of 27 nC @ 10 V

Operating temperature range of -55°C to 150°C

Drain-to-source voltage of 60 V

Gate-to-source voltage of ±20 V

Continuous drain current of 6.2 A @ 25°C

Product Advantages

Excellent power efficiency

High reliability

Wide operating temperature range

Suitable for various power management applications

Key Technical Parameters

Drain-to-source voltage (Vdss): 60 V

Gate-to-source voltage (Vgs): ±20 V

On-resistance (Rds(on)): 22 mΩ @ 10.3 A, 10 V

Continuous drain current (Id): 6.2 A @ 25°C

Power dissipation (Pd): 1.8 W @ 25°C

Quality and Safety Features

RoHS3 compliant

Packaged in PowerPAK SO-8 surface mount package

Compatibility

Compatible with various power management applications, such as:

Switching power supplies

Motor drives

Battery chargers

Telecommunications equipment

Application Areas

Power management

Motor control

Battery charging

Telecommunications

Product Lifecycle

The SI7850DP-T1-E3 is an active product, and there are no known plans for discontinuation. Replacements or upgrades may be available as technology advances.

Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

High reliability and wide operating temperature range

Suitable for various power management applications

Compact and easy-to-use surface mount package

RoHS3 compliance for environmental friendliness