SI7850ADP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7850ADP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel power MOSFET in a PowerPAK SO-8 package.

Product Features and Performance

TrenchFET Gen IV technology

Low on-resistance (RDS(on)) of 19.5 mΩ at 10 A, 10 V

High current capability of 10.3 A at 25°C

Wide operating temperature range of -55°C to 150°C

Low gate charge (Qg) of 17 nC at 10 V

Low input capacitance (Ciss) of 790 pF at 30 V

Product Advantages

Excellent efficiency and power density

Reduced switching losses

Improved thermal performance

Suitable for high-frequency switching applications

Key Technical Parameters

Drain to Source Voltage (VDS): 60 V

Gate to Source Voltage (VGS): ±20 V

Continuous Drain Current (ID): 10.3 A at 25°C, 12 A at case temperature

Power Dissipation (PD): 3.6 W at ambient, 35.7 W at case temperature

Gate Threshold Voltage (VGS(th)): 2.8 V at 250 µA

On-Resistance (RDS(on)): 19.5 mΩ at 10 A, 10 V

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Compatible with various power supply, motor control, and other high-power switching applications

Application Areas

Switching power supplies

Motor drives

Industrial and consumer electronics

Automotive electronics

Product Lifecycle

Currently available

No known plans for discontinuation

Upgrades and replacements may be available in the future

Key Reasons to Choose This Product

Excellent efficiency and power density for improved system performance

Low on-resistance and switching losses for high-frequency operation

Wide operating temperature range for reliable performance in harsh environments

Small PowerPAK SO-8 package for compact design

RoHS3 compliance for environmental sustainability