SI7852DP-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7852DP-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

N-Channel MOSFET Transistor

Product Features and Performance

80V Drain to Source Voltage (Vdss)

5mOhm Maximum On-Resistance (Rds(on)) @ 10A, 10V

6A Continuous Drain Current (Id) @ 25°C

9W Maximum Power Dissipation (Ta)

-55°C to 150°C Operating Temperature Range

Product Advantages

Efficient power switching performance

Low on-resistance for low power loss

Wide operating temperature range

Compact PowerPAK SO-8 surface mount package

Key Technical Parameters

Vgs (Max): ±20V

Vgs(th) (Max) @ Id: 2V @ 250A (Min)

Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V

Drive Voltage (Max Rds On, Min Rds On): 6V, 10V

Quality and Safety Features

RoHS3 Compliant

Reliable MOSFET technology

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Power supplies

Motor drives

Switching regulators

Audio amplifiers

Battery chargers

Industrial controls

Product Lifecycle

Current production, no discontinuation plans

Key Reasons to Choose This Product

Excellent power switching performance

Low on-resistance for high efficiency

Wide operating temperature range

Compact surface mount package

Reliable MOSFET technology

RoHS3 compliance for environmental responsibility