Manufacturer Part Number
SI7852DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-channel enhancement-mode power MOSFET in a PowerPAK SO-8 package
Product Features and Performance
Trench MOSFET technology
Low on-resistance
Low gate charge
Wide operating temperature range (-55°C to 150°C)
High drain-to-source voltage (80V)
Low gate-to-source voltage (±20V)
Product Advantages
Excellent thermal performance
Compact and space-saving package
High power density
Efficient power conversion
Key Technical Parameters
Drain to Source Voltage (Vdss): 80V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 16.5 mΩ @ 10A, 10V
Continuous Drain Current (Id): 7.6A @ 25°C
Power Dissipation (Pd): 1.9W @ 25°C
Gate Charge (Qg): 41 nC @ 10V
Quality and Safety Features
RoHS3 compliant
Safe and reliable operation
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Electric vehicles
Industrial electronics
Telecommunications equipment
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent thermal performance for efficient power conversion
Compact and space-saving PowerPAK SO-8 package
High power density and low on-resistance for high-efficiency applications
Wide operating temperature range for versatile usage
RoHS3 compliance for environmental safety