SI7308DN-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7308DN-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

N-channel TrenchFET power MOSFET

Product Features and Performance

Low on-resistance

High power density

Fast switching

Product Advantages

High efficiency

Optimized for power conversion applications

Suitable for high frequency switching

Key Technical Parameters

Drain to Source Voltage (Vdss): 60V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V

Continuous Drain Current (Id) @ 25°C: 6A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V

Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)

Vgs(th) (Max) @ Id: 3V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Suitable for high reliability applications

Compatibility

Surface mount package (PowerPAK 1212-8)

Compatible with standard MOSFET drivers

Application Areas

Power conversion

Switch-mode power supplies

Motor drives

Lighting applications

Product Lifecycle

Actively available

Replacements or upgrades may be available

Several Key Reasons to Choose This Product

Excellent efficiency and power density

Fast switching and low on-resistance

Suitable for high frequency and high power applications

Reliable and RoHS-compliant